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Electronic Parts Search

Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 317
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
M16U4G16256A-3200(2Z)ESMT4Gb DDR4 SDRAM Auto.DRAM Memory96 Ball BGA2.5V-40°C – 105°C
Memory Size:
4 Gbit
Clock Frequency:
1.6 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
13.75 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DDR4 SDRAM
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
JEDEC
Packaging:
96 Ball BGA
622
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N/A
M16U4G8512A-2666(2Z)ESMT4Gb DDR4 SDRAM Ind.DRAM Memory78 Ball BGA2.5V-40°C – 95°C
Memory Size:
4 Gbit
Clock Frequency:
1.333 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
13.75 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DDR4 SDRAM
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
78 Ball BGA
1,920
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N/A
M16U4G8512A-3200(2Z)ESMT4Gb DDR4 SDRAM Ind.DRAM Memory78 Ball BGA2.5V-40°C – 95°C
Memory Size:
4 Gbit
Clock Frequency:
1.6 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
13.75 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DDR4 SDRAM
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
78 Ball BGA
1,249
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N/AN/AM24D6488CA (2A)ESMTOctal PSRAMDRAM Memory24 ball BGA2.5VN/A
Memory Size:
N/A
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
PSRAM
Memory Organization:
8M x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
24 ball BGA
375
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N/AN/AM24D6488PA (2A)ESMTPSRAM Ind.DRAM Memory24 ball BGA2.5V-40°C – 85°C
Memory Size:
N/A
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
PSRAM
Memory Organization:
8M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
24 ball BGA
754
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QUOTE
N/AN/AM24L6488CA (2A)ESMTOctal PSRAM Ind.DRAM Memory24 ball BGA2.5V-40°C – 85°C
Memory Size:
N/A
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
PSRAM
Memory Organization:
8M x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
24 ball BGA
750
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N/A
M52D2561616A-5BG2FESMT256Mb SDRAMDRAM Memory54-FBGA (8x8)1.7V ~ 1.95V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-FBGA
127
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QUOTE
N/A
M52D2561616A-5BIG2FESMT256Mb SDRAM Ind.DRAM Memory54-FBGA (8x8)1.7V ~ 1.95V-40°C – 85°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
LVCMOS
Grade:
Industrial
Qualification:
JEDEC
Packaging:
54-FBGA
1,294
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QUOTE
N/A
M52D2561616A-6BG2FESMT256Mb SDRAMDRAM Memory54-FBGA (8x8)1.7V ~ 1.95V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-FBGA
864
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QUOTE
N/A
M52D2561616A-6BIG2FESMT256Mb SDRAM Ind.DRAM Memory54-FBGA (8x8)1.7V ~ 1.95V-40°C – 85°C
Memory Size:
256 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
LVCMOS
Grade:
Industrial
Qualification:
JEDEC
Packaging:
54-FBGA
566
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QUOTE
N/A
M52D2561616A-7BG2FESMT256Mb SDRAMDRAM Memory54-FBGA (8x8)1.7V ~ 1.95V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
6 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-FBGA
1,277
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QUOTE
N/A
M52D2561616A-7BIG2FESMT256Mb SDRAM Ind.DRAM Memory54-FBGA (8x8)1.7V ~ 1.95V-40°C – 85°C
Memory Size:
256 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
6 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
LVCMOS
Grade:
Industrial
Qualification:
JEDEC
Packaging:
54-FBGA
38
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QUOTE
N/A
M52D256328A-6BG2FESMT256Mb SDRAMDRAM Memory90-FBGA (8x13)1.7V ~ 1.95V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5.4 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 32
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
90-FBGA
897
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QUOTE
N/A
M52D256328A-7BG2FESMT256Mb SDRAMDRAM Memory90-FBGA (8x13)1.7V ~ 1.95V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
6 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 32
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
90-FBGA
1,378
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QUOTE
N/A
M52D5121632A-5BGESMT512Mb SDRAMDRAM Memory54-FBGA (8x8)1.7V ~ 1.95V0°C – 70°C
Memory Size:
512 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
8M x 16
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-FBGA
236
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QUOTE
N/A
M52D5121632A-5BIGESMT512Mb SDRAM Ind.DRAM Memory54-FBGA (8x8)1.7V ~ 1.95V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
10 ns
Access Time:
4.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
8M x 16
Memory Interface:
LVCMOS
Grade:
Industrial
Qualification:
JEDEC
Packaging:
54-FBGA
1,040
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QUOTE
N/A
M52D5121632A-6BGESMT512Mb SDRAMDRAM Memory54-FBGA (8x8)1.7V ~ 1.95V0°C – 70°C
Memory Size:
512 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
8M x 16
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-FBGA
616
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QUOTE
N/A
M52D5121632A-6BIGESMT512Mb SDRAM Ind.DRAM Memory54-FBGA (8x8)1.7V ~ 1.95V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
12 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
8M x 16
Memory Interface:
LVCMOS
Grade:
Industrial
Qualification:
JEDEC
Packaging:
54-FBGA
407
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QUOTE
N/A
M52D5121632A-7BGESMT512Mb SDRAMDRAM Memory54-FBGA (8x8)1.7V ~ 1.95V0°C – 70°C
Memory Size:
512 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
6 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
8M x 16
Memory Interface:
LVCMOS
Grade:
Commercial
Qualification:
JEDEC
Packaging:
54-FBGA
1,630
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QUOTE
N/A
M52D5121632A-7BIGESMT512Mb SDRAM Ind.DRAM Memory54-FBGA (8x8)1.7V ~ 1.95V-40°C – 85°C
Memory Size:
512 Mbit
Clock Frequency:
143 MHz
Write Cycle Time Word Page:
14 ns
Access Time:
6 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
8M x 16
Memory Interface:
LVCMOS
Grade:
Industrial
Qualification:
JEDEC
Packaging:
54-FBGA
102
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QUOTE

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