| N/A | | M13S2561616A-5TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 625 | |
| N/A | | M13S2561616A-6BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 355 | |
| N/A | | M13S2561616A-6BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 866 | |
| N/A | | M13S2561616A-6TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 784 | |
| N/A | | M13S2561616A-6TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 887 | |
| N/A | | M13S5121632A-5TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,868 | |
| N/A | | M13S5121632A-5TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 888 | |
| N/A | | M13S5121632A-6TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 461 | |
| N/A | | M13S5121632A-6TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 399 | |
| N/A | | M13S64164A-4TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 502 | |
| N/A | | M13S64164A-5TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 88 | |
| N/A | | M13S64164A-6TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 1,266 | |
| N/A | | M14D128168A-1.5BG2Y | ESMT | 128Mb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 253 | |
| N/A | | M14D128168A-1.6BG2Y | ESMT | 128Mb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,562 | |
| N/A | | M14D128168A-1.8BG2Y | ESMT | 128Mb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 137 | |
| N/A | | M14D128168A-1(2Y) | ESMT | 128Mb DDR SDRAM | DRAM Memory | 84 Ball FBGA | 2.5V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,096 | |
| N/A | | M14D128168A-2.5BG2Y | ESMT | 128Mb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 975 | |
| N/A | | M14D128168A-2(2Y) | ESMT | 128Mb DDR SDRAM | DRAM Memory | 84 Ball FBGA | 2.5V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 922 | |
| N/A | | M14D1G1664A-1.5BG2P | ESMT | 1Gb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 647 | |
| N/A | | M14D1G1664A-1.6BG2P | ESMT | 1Gb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 587 | |