 | | IS42S16400J-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,191 | |
 | | IS42S16400J-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,521 | |
 | | IS42S16400J-7B2LI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 958 | |
 | | IS42S16400J-7B2LI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 457 | |
 | | IS42S16400J-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 713 | |
 | | IS42S16400J-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,107 | |
 | | IS42S16400J-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 195 | |
 | | IS42S16400J-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 445 | |
 | | IS42S16400J-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 720 | |
 | | IS42S16400J-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,001 | |
 | | IS42S16400J-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 943 | |
 | | IS42S16400J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 671 | |
 | N/A | IS42S16400N-6BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 106 | |
 | N/A | IS42S16400N-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 955 | |
 | N/A | IS42S16400N-6BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,137 | |
 | N/A | IS42S16400N-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 220 | |
 | N/A | IS42S16400N-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,782 | |
 | N/A | IS42S16400N-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 56 | |
 | N/A | IS42S16400N-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 514 | |
 | N/A | IS42S16400N-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 131 | |