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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | IS42S16400N-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,734 | |
 | N/A | IS42S16400N-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 326 | |
 | N/A | IS42S16400N-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 499 | |
 | N/A | IS42S16400N-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 578 | |
 | N/A | IS42S16400N-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 192 | |
 | N/A | IS42S16400N-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 197 | |
 | N/A | IS42S16400N-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 637 | |
 | N/A | IS42S16400N-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 170 | |
 | IS42S16800D-6T | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,223 | ||
 | IS42S16800D-6T-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 397 | ||
 | IS42S16800D-75EBL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 35 | ||
 | IS42S16800D-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 319 | ||
 | IS42S16800D-75EBLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 131 | ||
 | IS42S16800D-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 229 | ||
 | IS42S16800D-75ETL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 53 | ||
 | IS42S16800D-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 555 | ||
 | IS42S16800D-75ETLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,580 | ||
 | IS42S16800D-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,147 | ||
 | IS42S16800D-7B | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 671 | ||
 | IS42S16800E-6BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 840 |
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