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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS42S32160B-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 156 | ||
 | IS42S32160B-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 493 | ||
 | IS42S32160B-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 7 | ||
 | IS42S32160B-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 678 | ||
 | IS42S32160B-7TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,548 | ||
 | IS42S32160B-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,245 | ||
 | IS42S32160B-7TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 504 | ||
 | IS42S32160B-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,139 | ||
 | IS42S32160C-6BI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 351 | ||
 | IS42S32160C-6BI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,217 | ||
 | IS42S32160C-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,024 | ||
 | IS42S32160C-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 475 | ||
 | IS42S32160C-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 12 | ||
 | IS42S32160C-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,535 | ||
 | IS42S32160C-75BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 21 | ||
 | IS42S32160C-75BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 536 | ||
 | IS42S32160C-75BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,477 | ||
 | IS42S32160C-75BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,540 | ||
 | IS42S32160D-6BI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 207 | ||
 | IS42S32160D-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 341 |
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