 | | IS42S32400F-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 115 | |
 | | IS42S32400F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 268 | |
 | | IS42S32400F-7B | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 934 | |
 | | IS42S32400F-7BI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 186 | |
 | | IS42S32400F-7BI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 144 | |
 | | IS42S32400F-7BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,900 | |
 | | IS42S32400F-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,308 | |
 | | IS42S32400F-7BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,311 | |
 | | IS42S32400F-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,744 | |
 | | IS42S32400F-7TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 606 | |
 | | IS42S32400F-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 313 | |
 | | IS42S32400F-7TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 399 | |
 | | IS42S32400F-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 569 | |
| N/A | | IS42S32400J-6BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 531 | |
| N/A | | IS42S32400J-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 430 | |
 | | IS42S32400J-6BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 433 | |
| N/A | | IS42S32400J-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 347 | |
| N/A | | IS42S32400J-6TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,697 | |
| N/A | | IS42S32400J-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 877 | |
 | | IS42S32400J-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 990 | |