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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | IS43DR16160B-25DBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 308 | |
 | N/A | IS43DR16160B-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 355 | |
 | N/A | IS43DR16160B-37CBL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Access Time: 500 ps Clock Frequency: 266 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 8 | |
 | N/A | IS43DR16160B-37CBL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Access Time: 500 ps Clock Frequency: 266 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 825 | |
 | N/A | IS43DR16160B-37CBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 500 ps Clock Frequency: 266 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 553 | |
 | N/A | IS43DR16160B-37CBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 500 ps Clock Frequency: 266 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 116 | |
 | N/A | IS43DR16160B-3DBI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,025 | |
 | N/A | IS43DR16160B-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 350 | |
 | N/A | IS43DR16160B-3DBL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 928 | |
 | N/A | IS43DR16160B-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,049 | |
 | N/A | IS43DR16160B-3DBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 408 | |
 | N/A | IS43DR16160B-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,518 | |
 | IS43DR16320C-25DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 996 | ||
 | IS43DR16320C-25DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,306 | ||
 | IS43DR16320C-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 480 | ||
 | IS43DR16320C-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,329 | ||
 | IS43DR16320D-25DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,317 | ||
 | IS43DR16320D-25DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 204 | ||
 | IS43DR16320D-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,610 | ||
 | IS43DR16320D-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 314 |
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