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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS43DR16320E-25DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 832 | ||
| N/A | IS43DR16320E-25DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 328 | ||
 | IS43DR16320E-25DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 863 | ||
 | IS43DR16320E-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 816 | ||
 | IS43DR16320E-3DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,380 | ||
| N/A | IS43DR16320E-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 734 | ||
 | IS43DR16320E-3DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 907 | ||
 | IS43DR16320E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,124 | ||
 | IS43DR86400C-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 68 | ||
 | IS43DR86400C-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,311 | ||
| N/A | IS43DR86400D-3DBL | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 161 | ||
| N/A | IS43DR86400D-3DBL-TR | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,345 | ||
 | IS43DR86400E-25DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,354 | ||
 | IS43DR86400E-25DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,258 | ||
 | IS43DR86400E-25DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,726 | ||
 | IS43DR86400E-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 547 | ||
 | IS43DR86400E-3DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 584 | ||
 | IS43DR86400E-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: SSTL_18 Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 51 | ||
 | IS43DR86400E-3DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 256 | ||
 | IS43DR86400E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,071 |
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