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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS43R16320F-5TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,753 | ||
 | IS43R16320F-5TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 784 | ||
 | IS43R16320F-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 517 | ||
 | IS43R16320F-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,038 | ||
 | IS43R16320F-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 864 | ||
 | IS43R16320F-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 135 | ||
 | IS43R16320F-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 891 | ||
 | IS43R16320F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,353 | ||
 | IS43R16320F-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 131 | ||
 | IS43R16320F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,612 | ||
 | IS43R16800A-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 733 | ||
 | IS43R16800C-5TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 485 | ||
 | N/A | IS43R16800E-5TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 37 | |
 | N/A | IS43R16800E-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 200 | |
 | N/A | IS43R16800E-5TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 15 | |
 | N/A | IS43R16800E-6TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 12 ns | 1,428 | |
 | N/A | IS43R16800E-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 12 ns | 682 | |
 | IS43R32160D-5BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 144-LFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 657 | ||
 | IS43R32160D-5BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 144-LFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,546 | ||
 | N/A | IS43R32400E-4BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 250 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 144-LFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 16 ns | 893 |
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