 | | IS42S16400D-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,364 | |
 | | IS42S16400D-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 136 | |
 | | IS42S16400D-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 302 | |
 | | IS42S16400D-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 682 | |
 | | IS42S16400D-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 972 | |
 | | IS42S16400D-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 435 | |
 | | IS42S16400D-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 935 | |
 | | IS42S16400D-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 301 | |
 | | IS42S16400D-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 679 | |
 | | IS42S16400E-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 949 | |
 | | IS42S16400F-5BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,718 | |
 | | IS42S16400F-5BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 499 | |
 | | IS42S16400F-5TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 646 | |
 | | IS42S16400F-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 182 | |
 | | IS42S16400F-6BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 127 | |
 | | IS42S16400F-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 615 | |
 | | IS42S16400F-6BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 848 | |
 | | IS42S16400F-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 345 | |
 | | IS42S16400F-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 727 | |
 | | IS42S16400F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 984 | |