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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | MT46V32M16TG-75 L:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 509 | |
 | N/A | MT46V32M16TG-75:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,445 | |
 | N/A | MT46V32M16TG-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,458 | |
 | N/A | MT46V32M16TG-75E:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,907 | |
 | N/A | MT46V32M16TG-75E:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 956 | |
 | N/A | MT46V32M16TG-75Z:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 36 | |
 | N/A | MT46V32M16TG-75Z:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 144 | |
 | N/A | MT46V32M4TG-6T:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 4 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,056 | |
 | MT46V32M8BG-5B:GTR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 352 | ||
 | MT46V32M8BG-6:GTR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 688 | ||
 | MT46V32M8CY-5B:M | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,157 | ||
 | MT46V32M8CY-5B:M TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,863 | ||
 | MT46V32M8FG-5B:G TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,517 | ||
 | MT46V32M8FG-6 IT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 310 | ||
 | MT46V32M8FG-6:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,649 | ||
 | MT46V32M8P-5B IT:M | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 313 | ||
 | MT46V32M8P-5B IT:M TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 962 | ||
 | MT46V32M8P-5B L:M | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 589 | ||
 | MT46V32M8P-5B:GTR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 412 | ||
 | MT46V32M8P-5B:M TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,491 |
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