Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT46V8M16TG-75:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 517 | ||
 | MT47H128M4B6-25:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 50 | ||
 | MT47H128M4B6-25E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 588 | ||
 | MT47H128M4B6-3:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 598 | ||
 | MT47H128M4CB-3:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,299 | ||
 | MT47H128M4CB-37E:B | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,754 | ||
 | MT47H128M4CB-5E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 321 | ||
 | MT47H128M4CF-25E:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 186 | ||
| N/A | MT47H128M4CF-25E:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,360 | ||
| N/A | MT47H128M4SH-25E:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 690 | ||
| N/A | N/A | MT47H128M4SH-25E:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 782 | |
 | MT47H16M16BG-3 IT:B TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x14) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,924 | ||
 | MT47H16M16BG-3:B TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x14) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 707 | ||
 | MT47H16M16BG-5E:B | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x14) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,325 | ||
 | MT47H16M16BG-5E:B TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x14) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 506 | ||
 | MT47H32M16BN-25:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,476 | ||
 | MT47H32M16BN-25E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,309 | ||
 | MT47H32M16BN-25E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 726 | ||
 | MT47H32M16BN-3 IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 726 | ||
 | MT47H32M16BN-3:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 453 |
If you can’t find the parts you’re looking for in our database, don’t worry! We’re here to help. Simply fill out the form below with the part number you need and your contact information, and we’ll locate it for you. If you prefer to speak to someone directly, our sales team is available at 949.783.7300.
Global Sourcing Capabilities
Second Sourcing Solutions
Obsolescence Management
Shortage Mitigation