 | | MT47H32M16CC-5E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 459 | |
 | | MT47H32M16HR-187E:G | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 284 | |
| N/A | | MT47H32M16HR-187E:G TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 748 | |
 | | MT47H32M16HR-25E AAT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 564 | |
| N/A | | MT47H32M16HR-25E AAT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 272 | |
 | | MT47H32M16HR-25E AIT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,053 | |
| N/A | | MT47H32M16HR-25E AIT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,076 | |
 | | MT47H32M16HR-25E IT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,166 | |
 | | MT47H32M16HR-25E IT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 161 | |
 | | MT47H32M16HR-25E L:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 106 | |
| N/A | | MT47H32M16HR-25E L:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,476 | |
 | | MT47H32M16HR-25E:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 872 | |
| N/A | | MT47H32M16HR-25E:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 949 | |
 | | MT47H32M16HR-3:F | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,625 | |
| N/A | | MT47H32M16HR-3:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,108 | |
| N/A | | MT47H32M16HR-3:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 865 | |
 | | MT47H32M16HW-25E AAT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 33 | |
 | | MT47H32M16HW-25E IT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,695 | |
 | | MT47H32M16HW-25E:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 367 | |
 | | MT47H32M16NF-187E:H | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,486 | |