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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | MT47H32M16NF-187E:H TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 350 ps Clock Frequency: 533 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 78 | |
 | N/A | MT47H32M16NF-25E AAT:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 324 | |
 | N/A | MT47H32M16NF-25E AAT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,145 | |
 | N/A | MT47H32M16NF-25E AIT:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 924 | |
 | N/A | MT47H32M16NF-25E AIT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,796 | |
 | N/A | MT47H32M16NF-25E AUT:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 125°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 268 | |
 | N/A | MT47H32M16NF-25E AUT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 125°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,334 | |
 | MT47H32M16NF-25E IT:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,220 | ||
 | MT47H32M16NF-25E IT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 15 | ||
 | MT47H32M16NF-25E:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 572 | ||
 | MT47H32M16NF-25E:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 542 | ||
 | MT47H32M8BP-3:B TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,203 | ||
 | MT47H32M8BP-37E:B TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x12) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,844 | ||
 | MT47H32M8BP-5E:B | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,197 | ||
 | MT47H64M8B6-25:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,072 | ||
 | MT47H64M8B6-25E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,342 | ||
 | MT47H64M8B6-25E L:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,478 | ||
 | MT47H64M8B6-25E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,719 | ||
 | MT47H64M8B6-3 IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 637 | ||
 | MT47H64M8B6-3:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 863 |
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