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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | MT40A8G4BAF-062E:B TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (10.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 1,197 | |
| N/A | N/A | MT40A8G4CLU-062H:E | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 95 | |
| N/A | N/A | MT40A8G4CLU-062H:E TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 1,703 | |
| N/A | N/A | MT40A8G4CLU-075H:E | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 27 ns Clock Frequency: 1.33 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 326 | |
| N/A | N/A | MT40A8G4CLU-075H:E TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 27 ns Clock Frequency: 1.33 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 492 | |
 | N/A | MT40A8G4KVA-075H:G | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (8x12) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 27 ns Clock Frequency: 1.33 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 439 | |
 | N/A | MT40A8G4KVA-075H:G TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (8x12) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 27 ns Clock Frequency: 1.33 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 1,073 | |
| N/A | MT40A8G4NEA-062E:F | Micron Technology Inc. | IC DRAM 32GBIT PAR 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 238 | ||
| N/A | MT40A8G4NEA-062E:F TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 187 | ||
| N/A | MT40A8G4VNE-062H:B | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 1.6GHZ | DRAM Memory | N/A | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 255 | ||
| N/A | MT40A8G4VNE-062H:B TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 1.6GHZ | DRAM Memory | N/A | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8G x 4 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 1,704 | ||
 | MT46V128M4BN-6:F | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,539 | ||
 | MT46V128M4FN-5B:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 857 | ||
 | MT46V128M4FN-6:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 124 | ||
 | MT46V128M4FN-6:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,415 | ||
 | N/A | MT46V128M4FN-75:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 917 | |
 | MT46V128M4P-5B:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 621 | ||
 | MT46V128M4TG-5B:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,569 | ||
 | MT46V128M4TG-6T:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 20 | ||
 | MT46V128M4TG-6T:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,533 |
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