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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT47H64M8B6-37E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 711 | ||
 | MT47H64M8B6-37E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 106 | ||
 | MT47H64M8B6-5E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,636 | ||
 | MT47H64M8B6-5E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 374 | ||
 | MT47H64M8CB-25:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 446 | ||
 | MT47H64M8CB-25:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,801 | ||
 | MT47H64M8CB-3:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 235 | ||
 | MT47H64M8CB-3:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 893 | ||
 | MT47H64M8CB-37E IT:B | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 402 | ||
 | MT47H64M8CB-37E IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 330 | ||
 | MT47H64M8CB-37E:B | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 333 | ||
 | MT47H64M8CB-37E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,054 | ||
 | MT47H64M8CB-37V:B | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 97 | ||
 | MT47H64M8CB-37V:B TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 500 ps Clock Frequency: 267 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,471 | ||
 | MT47H64M8CB-5E IT:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 28 | ||
 | MT47H64M8CB-5E IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 447 | ||
 | MT47H64M8CB-5E:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,375 | ||
 | MT47H64M8CB-5E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 600 ps Clock Frequency: 200 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 801 | ||
 | MT47H64M8CF-25E AIT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 705 | ||
| N/A | MT47H64M8CF-25E AIT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,190 |
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