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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT48LC4M16A2TG-7E IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 730 | ||
 | MT48LC4M16A2TG-7E IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,969 | ||
 | MT48LC4M16A2TG-7E:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 757 | ||
 | MT48LC4M32B2B5-6:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,915 | ||
 | MT48LC4M32B2B5-6:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 699 | ||
 | MT48LC4M32B2B5-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,287 | ||
 | MT48LC4M32B2B5-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 64 | ||
| N/A | MT48LC4M32B2B5-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,086 | ||
| N/A | MT48LC4M32B2B5-6A IT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 30 | ||
 | MT48LC4M32B2B5-6A:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 320 | ||
 | MT48LC4M32B2B5-6A:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 23 | ||
 | MT48LC4M32B2B5-7 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 781 | ||
 | MT48LC4M32B2B5-7 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,912 | ||
 | MT48LC4M32B2B5-7:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,297 | ||
 | MT48LC4M32B2B5-7:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 916 | ||
 | MT48LC4M32B2F5-6:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 69 | ||
 | MT48LC4M32B2F5-6:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 463 | ||
 | MT48LC4M32B2F5-7 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,822 | ||
 | MT48LC4M32B2F5-7:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,386 | ||
 | MT48LC4M32B2P-6 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 175 |
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