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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT48LC8M16A2B4-6A XIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,242 | ||
 | MT48LC8M16A2B4-6A XIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 699 | ||
 | MT48LC8M16A2B4-6A:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 423 | ||
 | MT48LC8M16A2B4-6A:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 137 | ||
 | MT48LC8M16A2B4-75 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 208 | ||
 | MT48LC8M16A2B4-75 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 477 | ||
 | MT48LC8M16A2B4-75:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 1,818 | ||
 | MT48LC8M16A2B4-75:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 112 | ||
 | MT48LC8M16A2F4-75 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 663 | ||
 | MT48LC8M16A2F4-75:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 344 | ||
 | MT48LC8M16A2P-6A AAT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,741 | ||
 | MT48LC8M16A2P-6A AAT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 933 | ||
 | MT48LC8M16A2P-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 682 | ||
 | MT48LC8M16A2P-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,066 | ||
 | MT48LC8M16A2P-6A IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 519 | ||
 | MT48LC8M16A2P-6A XIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 403 | ||
 | MT48LC8M16A2P-6A XIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 306 | ||
 | MT48LC8M16A2P-6A:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,603 | ||
 | MT48LC8M16A2P-6A:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,072 | ||
 | MT48LC8M16A2P-75 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 216 |
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