 | | MT48LC8M8A2P-75:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 500 | |
 | | MT48LC8M8A2P-75:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,802 | |
 | | MT48LC8M8A2TG-75:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 82 | |
 | | MT49H16M16FM-5 TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 144UBGA | DRAM Memory | 144-�BGA (18.5x11) | 1.7V ~ 1.95V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,808 | |
| N/A | N/A | MT52L1G32D4PG-093 WT ES:B | Micron Technology Inc. | IC DRAM 32GBIT 1067MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.067 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,562 | |
| N/A | N/A | MT52L1G32D4PG-093 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 1067MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.067 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 138 | |
| N/A | N/A | MT52L1G32D4PG-093 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.066GHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.066 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,000 | |
| N/A | N/A | MT52L1G32D4PG-107 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 263 | |
| N/A | N/A | MT52L1G32D4PG-107 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 9 | |
| N/A | N/A | MT52L1G64D8QC-107 WT ES:B | Micron Technology Inc. | IC DRAM 64GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (12x12) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 278 | |
| N/A | N/A | MT52L1G64D8QC-107 WT:B | Micron Technology Inc. | IC DRAM 64GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (12x12) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,195 | |
| N/A | N/A | MT52L1G64D8QC-107 WT:B TR | Micron Technology Inc. | IC DRAM 64GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (12x12) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 668 | |
| N/A | N/A | MT52L512M64D4GN-107 WT ES:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 256FBGA | DRAM Memory | 256-FBGA (14x14) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,657 | |
| N/A | N/A | MT52L512M64D4GN-107 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 256FBGA | DRAM Memory | 256-FBGA (14x14) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 821 | |
| N/A | N/A | MT52L512M64D4GN-107 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 256FBGA | DRAM Memory | 256-FBGA (14x14) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 961 | |
| N/A | N/A | MT52L512M64D4PQ-093 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1067MHZ 253VFBGA | DRAM Memory | 253-VFBGA (11x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.067 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 659 | |
| N/A | N/A | MT52L512M64D4PQ-107 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (11x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,524 | |
| N/A | N/A | MT52L512M64D4PQ-107 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (11x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 606 | |
 | N/A | MT53B1024M32D4NQ-053 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 640 | |
 | N/A | MT53B1024M32D4NQ-053 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 657 | |