 | N/A | MT53B1024M32D4NQ-062 WT ES:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 262 | |
 | N/A | MT53B1024M32D4NQ-062 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 278 | |
 | N/A | MT53B1024M32D4NQ-062 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,940 | |
| N/A | N/A | MT53B1024M64D8PM-062 WT:D TR | Micron Technology Inc. | IC DRAM 64GBIT 1.6GHZ | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 106 | |
| N/A | N/A | MT53B512M64D4EZ-062 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 299 | |
| N/A | N/A | MT53B512M64D4NH-062 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 272WFBGA | DRAM Memory | 272-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,204 | |
| N/A | N/A | MT53B512M64D4NJ-062 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 272WFBGA | DRAM Memory | 272-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,024 | |
 | N/A | MT53B512M64D4NK-053 WT ES:C | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,443 | |
 | N/A | MT53B512M64D4NK-053 WT ES:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 778 | |
 | N/A | MT53B512M64D4NK-053 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,058 | |
 | N/A | MT53B512M64D4NK-053 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 241 | |
 | N/A | MT53B512M64D4NK-062 WT ES:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,562 | |
 | N/A | MT53B512M64D4NK-062 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 330 | |
 | N/A | MT53B512M64D4NK-062 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 335 | |
| N/A | N/A | MT53B512M64D4NW-062 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,695 | |
| N/A | N/A | MT53B512M64D4NW-062 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,442 | |
| N/A | N/A | MT53B512M64D4NW-062 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 18 | |
| N/A | N/A | MT53B512M64D4NZ-062 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,655 | |
| N/A | N/A | MT53B512M64D4PV-053 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,277 | |
| N/A | N/A | MT53B512M64D4PV-062 WT ES:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 170 | |