 | N/A | MT53D1024M32D4DT-053 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 510 | |
 | N/A | MT53D1024M32D4DT-053 AIT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,568 | |
 | N/A | MT53D1024M32D4DT-053 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,592 | |
 | N/A | MT53D1024M32D4DT-053 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 785 | |
 | N/A | MT53D1024M32D4DT-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,232 | |
 | N/A | MT53D1024M32D4DT-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,004 | |
 | N/A | MT53D1024M32D4DT-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 485 | |
 | N/A | MT53D1024M32D4NQ-046 AAT ES 😀 | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,271 | |
 | N/A | MT53D1024M32D4NQ-046 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,155 | |
 | N/A | MT53D1024M32D4NQ-046 AIT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 106 | |
 | N/A | MT53D1024M32D4NQ-046 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 715 | |
 | N/A | MT53D1024M32D4NQ-046 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 733 | |
 | N/A | MT53D1024M32D4NQ-046 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 935 | |
 | N/A | MT53D1024M32D4NQ-046 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,373 | |
 | N/A | MT53D1024M32D4NQ-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,146 | |
 | N/A | MT53D1024M32D4NQ-053 WT ES:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 75 | |
 | N/A | MT53D1024M32D4NQ-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 833 | |
 | N/A | MT53D1024M32D4NQ-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 925 | |
 | N/A | MT53D1024M32D4NQ-062 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 780 | |
 | N/A | MT53D1024M32D4NQ-062 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 525 | |