| N/A | N/A | MT53D1G64D8SQ-053 WT:E TR | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ 556VFBGA | DRAM Memory | 556-VFBGA (12.4x12.4) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,114 | |
| N/A | N/A | MT53D2048M32D8QD-046 WT ES:D | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,225 | |
| N/A | N/A | MT53D2048M32D8QD-053 WT ES:D | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 80 | |
| N/A | N/A | MT53D2048M32D8QD-053 WT:D | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 726 | |
| N/A | N/A | MT53D2048M32D8QD-053 WT:D TR | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,393 | |
| N/A | N/A | MT53D2048M32D8QD-062 WT ES:D | Micron Technology Inc. | IC DRAM 64GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,198 | |
| N/A | N/A | MT53D2048M32D8QD-062 WT:D | Micron Technology Inc. | IC DRAM 64GBIT 1.6GHZ | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,704 | |
| N/A | N/A | MT53D2G32D8QD-046 WT ES:E TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA 8DP | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 887 | |
| N/A | N/A | MT53D4G16D8AL-062 WT:E | Micron Technology Inc. | IC DRAM 64GBIT 1.6GHZ SMD | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 4G x 16 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 444 | |
| N/A | N/A | MT53D4G16D8AL-062 WT:E TR | Micron Technology Inc. | IC DRAM 64GBIT 1.6GHZ SMD | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 4G x 16 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 544 | |
| N/A | N/A | MT53D512M64D2BW-046 XT:B | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 533 | |
| N/A | N/A | MT53D512M64D2TR-046 XT:B | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,018 | |
| N/A | N/A | MT53D512M64D4CR-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,068 | |
| N/A | N/A | MT53D512M64D4CR-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 607 | |
 | N/A | MT53D512M64D4HR-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (12x12.7) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 813 | |
 | N/A | MT53D512M64D4HR-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (12x12.7) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 415 | |
 | N/A | MT53D512M64D4NW-046 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,016 | |
 | N/A | MT53D512M64D4NW-046 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,637 | |
 | N/A | MT53D512M64D4NW-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,459 | |
 | N/A | MT53D512M64D4NW-053 WT ES:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 510 | |