 | N/A | MT53D512M64D4NW-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 844 | |
 | N/A | MT53D512M64D4NW-062 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 197 | |
 | N/A | MT53D512M64D4NW-062 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 72 | |
| N/A | N/A | MT53D512M64D4NY-046 XT ES:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 802 | |
| N/A | N/A | MT53D512M64D4NY-046 XT ES:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 309 | |
 | N/A | MT53D512M64D4NZ-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 591 | |
 | N/A | MT53D512M64D4NZ-053 WT ES:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,236 | |
 | N/A | MT53D512M64D4NZ-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,610 | |
 | N/A | MT53D512M64D4NZ-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,061 | |
| N/A | N/A | MT53D512M64D4RQ-046 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 94 | |
| N/A | N/A | MT53D512M64D4RQ-046 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 665 | |
| N/A | N/A | MT53D512M64D4RQ-053 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 303 | |
| N/A | N/A | MT53D512M64D4SB-046 XT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,025 | |
| N/A | N/A | MT53D512M64D4SB-046 XT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,224 | |
 | N/A | MT53D512M64D8HR-053 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (12x12.7) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,427 | |
 | N/A | MT53D512M64D8HR-053 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (12x12.7) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 30 | |
| N/A | N/A | MT53D512M64D8TZ-053 WT ES:B | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,754 | |
 | | MT53E1G32D2FW-046 AAT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 517 | |
 | | MT53E1G32D2FW-046 AAT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 169 | |
 | | MT53E1G32D2FW-046 AAT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 701 | |