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Total Products: 1,015
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
MT53E1G64D4NW-046 WT:C TRN/AMT53E1G64D4NW-046 WT:C TRMicron Technology Inc.IC DRAM 64GBIT 432VFBGADRAM Memory432-VFBGA (15x15)N/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
N/A
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
432-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
487
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QUOTE
MT53E1G64D4NZ-046 WT:CN/AMT53E1G64D4NZ-046 WT:CMicron Technology Inc.IC DRAM 64GBIT PAR 376WFBGADRAM Memory376-WFBGA (14x14)1.06V ~ 1.17V-25°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
376-WFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
929
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QUOTE
MT53E1G64D4NZ-046 WT:C TRN/AMT53E1G64D4NZ-046 WT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 376WFBGADRAM Memory376-WFBGA (14x14)1.06V ~ 1.17V-25°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
376-WFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
286
GET A
QUOTE
MT53E1G64D4NZ-46 WT:CN/AMT53E1G64D4NZ-46 WT:CMicron Technology Inc.IC DRAM 64GBIT PAR 376WFBGADRAM Memory376-WFBGA (14x14)1.06V ~ 1.17V-25°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
376-WFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
18 ns
596
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QUOTE
N/AN/AMT53E1G64D4SP-046 WT:CMicron Technology Inc.IC DRAM 64GBIT BGADRAM MemoryN/AN/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
716
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QUOTE
N/AN/AMT53E1G64D4SP-046 WT:C TRMicron Technology Inc.IC DRAM 64GBIT BGADRAM MemoryN/AN/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
43
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QUOTE
N/AN/AMT53E1G64D4SQ-046 AAT:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ WFBGADRAM MemoryN/A1.1V-40°C ~ 105°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,006
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QUOTE
N/AN/AMT53E1G64D4SQ-046 AAT:A TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ WFBGADRAM MemoryN/A1.1V-40°C ~ 105°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
91
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QUOTE
N/AN/AMT53E1G64D4SQ-046 AIT:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ WFBGADRAM MemoryN/A1.1V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
878
GET A
QUOTE
N/AN/AMT53E1G64D4SQ-046 AIT:A TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ WFBGADRAM MemoryN/A1.1V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
145
GET A
QUOTE
N/AN/AMT53E1G64D4SQ-046 WT:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ WFBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,377
GET A
QUOTE
N/AN/AMT53E1G64D4SQ-046 WT:A TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ WFBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
740
GET A
QUOTE
MT53E1G64D8NW-046 WT:EN/AMT53E1G64D8NW-046 WT:EMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
451
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QUOTE
MT53E1G64D8NW-046 WT:E TRN/AMT53E1G64D8NW-046 WT:E TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
321
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QUOTE
MT53E2G32D4DE-046 AAT:A
MT53E2G32D4DE-046 AAT:AMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
312
GET A
QUOTE
MT53E2G32D4DE-046 AAT:A TR
MT53E2G32D4DE-046 AAT:A TRMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
687
GET A
QUOTE
MT53E2G32D4DE-046 AAT:CN/AMT53E2G32D4DE-046 AAT:CMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
372
GET A
QUOTE
MT53E2G32D4DE-046 AAT:C TRN/AMT53E2G32D4DE-046 AAT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
594
GET A
QUOTE
MT53E2G32D4DE-046 AIT:A
MT53E2G32D4DE-046 AIT:AMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
38
GET A
QUOTE
MT53E2G32D4DE-046 AIT:A TR
MT53E2G32D4DE-046 AIT:A TRMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
467
GET A
QUOTE

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