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Total Products: 1,015
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
MT53E2G32D4DE-046 AIT:CN/AMT53E2G32D4DE-046 AIT:CMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
175
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QUOTE
MT53E2G32D4DE-046 AIT:C TRN/AMT53E2G32D4DE-046 AIT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
361
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QUOTE
MT53E2G32D4DE-046 AUT:CN/AMT53E2G32D4DE-046 AUT:CMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
932
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QUOTE
MT53E2G32D4DE-046 AUT:C TRN/AMT53E2G32D4DE-046 AUT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
280
GET A
QUOTE
MT53E2G32D4DE-046 WT:AN/AMT53E2G32D4DE-046 WT:AMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-25°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
966
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QUOTE
MT53E2G32D4DE-046 WT:A TRN/AMT53E2G32D4DE-046 WT:A TRMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-25°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
750
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QUOTE
MT53E2G32D4DE-046 WT:CN/AMT53E2G32D4DE-046 WT:CMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-25°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
571
GET A
QUOTE
MT53E2G32D4DE-046 WT:C TRN/AMT53E2G32D4DE-046 WT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-25°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,011
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QUOTE
MT53E2G32D4DT-046 AAT:AN/AMT53E2G32D4DT-046 AAT:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-40°C ~ 105°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
413
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QUOTE
MT53E2G32D4DT-046 AAT:A TRN/AMT53E2G32D4DT-046 AAT:A TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-40°C ~ 105°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
686
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QUOTE
MT53E2G32D4DT-046 AIT:AN/AMT53E2G32D4DT-046 AIT:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,474
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QUOTE
MT53E2G32D4DT-046 AIT:A TRN/AMT53E2G32D4DT-046 AIT:A TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,072
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QUOTE
MT53E2G32D4DT-046 WT ES:AN/AMT53E2G32D4DT-046 WT ES:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGA QDPDRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
68
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QUOTE
MT53E2G32D4DT-046 WT:AN/AMT53E2G32D4DT-046 WT:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,309
GET A
QUOTE
MT53E2G32D4DT-046 WT:A TRN/AMT53E2G32D4DT-046 WT:A TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,001
GET A
QUOTE
MT53E2G32D4NQ-046 WT:AN/AMT53E2G32D4NQ-046 WT:AMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ 200VFBGADRAM Memory200-VFBGA (10x14.5)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,018
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QUOTE
MT53E2G32D4NQ-046 WT:A TRN/AMT53E2G32D4NQ-046 WT:A TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ 200VFBGADRAM Memory200-VFBGA (10x14.5)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
662
GET A
QUOTE
MT53E2G32D4NQ-046 WT:CN/AMT53E2G32D4NQ-046 WT:CMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ 200VFBGADRAM Memory200-VFBGA (10x14.5)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,332
GET A
QUOTE
MT53E2G32D4NQ-046 WT:C TRN/AMT53E2G32D4NQ-046 WT:C TRMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ 200VFBGADRAM Memory200-VFBGA (10x14.5)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
200-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
955
GET A
QUOTE
N/AN/AMT53E2G32D8QD-046 WT:EMicron Technology Inc.IC DRAM 64GBIT 2.133GHZ FBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
2G x 32
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,356
GET A
QUOTE

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