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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT46V16M16TG-6T IT:F TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,670 | ||
 | MT46V16M16TG-6T:F TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,648 | ||
 | MT46V16M16TG-75 IT:F | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 815 | ||
 | MT46V16M16TG-75 IT:F TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 579 | ||
 | MT46V16M16TG-75:F | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,308 | ||
 | MT46V16M16TG-75:F TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 612 | ||
 | MT46V16M8P-75:D | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 778 | ||
 | MT46V16M8TG-6T IT:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,311 | ||
 | MT46V16M8TG-6T L:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 75 | ||
 | MT46V16M8TG-6T:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,056 | ||
 | MT46V16M8TG-75:D | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 637 | ||
| N/A | MT46V32M16BN-5B IT:F | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 195 | ||
| N/A | MT46V32M16BN-5B L IT:F | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,451 | ||
 | N/A | MT46V32M16BN-5B:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 782 | |
 | N/A | MT46V32M16BN-5B:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 717 | |
 | MT46V32M16BN-5B:F | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,584 | ||
 | MT46V32M16BN-5B:F TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 909 | ||
 | MT46V32M16BN-6 IT:F | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 178 | ||
 | MT46V32M16BN-6 IT:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 240 | ||
 | N/A | MT46V32M16BN-6:C | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 611 |
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