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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | N/A | MT53E2G32D8QD-046 WT:E TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 2G x 32 Memory Size: 64 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 696 | |
| N/A | N/A | MT53E2G32D8QD-053 WT:E | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 1.866 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 2G x 32 Memory Size: 64 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 553 | |
| N/A | N/A | MT53E2G32D8QD-053 WT:E TR | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 1.866 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 2G x 32 Memory Size: 64 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 512 | |
 | MT53E512M64D2HJ-046 AAT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,585 | ||
 | MT53E512M64D2HJ-046 AAT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,003 | ||
 | MT53E512M64D2HJ-046 AIT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,722 | ||
 | MT53E512M64D2HJ-046 AIT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,286 | ||
 | MT53E512M64D2HJ-046 AUT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,707 | ||
 | MT53E512M64D2HJ-046 AUT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 566 | ||
 | MT53E512M64D2HJ-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 1,486 | ||
 | MT53E512M64D2HJ-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 1 | ||
 | MT53E512M64D2NW-046 IT:B | Micron Technology Inc. | IC DRAM 32GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Access Time: N/A Clock Frequency: N/A Grade: N/A Memory Format: DRAM Memory Interface: N/A Memory Organization: N/A Memory Size: 32 Gbit Memory Type: N/A Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,506 | ||
 | MT53E512M64D2NW-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Access Time: N/A Clock Frequency: N/A Grade: N/A Memory Format: DRAM Memory Interface: N/A Memory Organization: N/A Memory Size: 32 Gbit Memory Type: N/A Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 190 | ||
 | MT53E512M64D2NW-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Access Time: N/A Clock Frequency: N/A Grade: N/A Memory Format: DRAM Memory Interface: N/A Memory Organization: N/A Memory Size: 32 Gbit Memory Type: N/A Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 226 | ||
 | MT53E512M64D2NZ-46 WT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 376-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 377 | ||
 | MT53E512M64D2NZ-46 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 376-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 1,107 | ||
| N/A | MT53E512M64D2RR-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-BGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 371 | ||
| N/A | MT53E512M64D2RR-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Access Time: N/A Clock Frequency: 2.133 GHz Grade: N/A Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: N/A Packaging: 556-BGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 999 | ||
 | MT53E512M64D4HJ-046 AAT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Access Time: N/A Clock Frequency: N/A Grade: N/A Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: N/A Packaging: 556-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 126 | ||
 | MT53E512M64D4HJ-046 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Access Time: N/A Clock Frequency: N/A Grade: N/A Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: N/A Packaging: 556-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 380 |
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