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Total Products: 1,015
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
MT53E512M64D4HJ-046 AIT:DMT53E512M64D4HJ-046 AIT:DMicron Technology Inc.IC DRAM 32GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 95°C
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
284
MT53E512M64D4HJ-046 AIT:D TRMT53E512M64D4HJ-046 AIT:D TRMicron Technology Inc.IC DRAM 32GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 95°C
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
905
MT53E512M64D4HJ-046 AUT:DMT53E512M64D4HJ-046 AUT:DMicron Technology Inc.IC DRAM 32GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 125°C
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
363
MT53E512M64D4HJ-046 AUT:D TRMT53E512M64D4HJ-046 AUT:D TRMicron Technology Inc.IC DRAM 32GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 125°C
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
1,440
MT53E512M64D4HJ-046 WT:D TRMT53E512M64D4HJ-046 WT:D TRMicron Technology Inc.IC DRAM 32GBIT PAR 556WFBGADRAM MemoryN/AN/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
N/A
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
43
MT53E512M64D4NK-046 WT:DMT53E512M64D4NK-046 WT:DMicron Technology Inc.IC DRAM 32GBIT 2.133GHZ 366WFBGADRAM Memory366-WFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
366-WFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,076
MT53E512M64D4NK-046 WT:D TRMT53E512M64D4NK-046 WT:D TRMicron Technology Inc.IC DRAM 32GBIT 2.133GHZ 366WFBGADRAM Memory366-WFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
366-WFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
393
MT53E512M64D4NK-053 WT:DMT53E512M64D4NK-053 WT:DMicron Technology Inc.IC DRAM 32GBIT 1.866GHZ 366WFBGADRAM Memory366-WFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
1.866 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
366-WFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,534
MT53E512M64D4NK-053 WT:D TRMT53E512M64D4NK-053 WT:D TRMicron Technology Inc.IC DRAM 32GBIT 1.866GHZ 366WFBGADRAM Memory366-WFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
1.866 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
366-WFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,400
MT53E512M64D4NW-046 IT:EMT53E512M64D4NW-046 IT:EMicron Technology Inc.IC DRAM 32GBIT 2.133GHZ 432VFBGADRAM Memory432-VFBGA (15x15)1.1V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
432-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,523
MT53E512M64D4NW-046 IT:E TRMT53E512M64D4NW-046 IT:E TRMicron Technology Inc.IC DRAM 32GBIT 2.133GHZ 432VFBGADRAM Memory432-VFBGA (15x15)1.1V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
432-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,377
MT53E512M64D4NW-046 WT:EMT53E512M64D4NW-046 WT:EMicron Technology Inc.IC DRAM 32GBIT 2.133GHZ 432VFBGADRAM Memory432-VFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
432-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
479
MT53E512M64D4NW-046 WT:E TRMT53E512M64D4NW-046 WT:E TRMicron Technology Inc.IC DRAM 32GBIT 2.133GHZ 432VFBGADRAM Memory432-VFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
432-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
288
MT53E512M64D4NW-053 WT:EMT53E512M64D4NW-053 WT:EMicron Technology Inc.IC DRAM 32GBIT 1.866GHZ 432VFBGADRAM Memory432-VFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
1.866 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
432-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,735
MT53E512M64D4NW-053 WT:E TRMT53E512M64D4NW-053 WT:E TRMicron Technology Inc.IC DRAM 32GBIT 1.866GHZ 432VFBGADRAM Memory432-VFBGA (15x15)1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
1.866 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
512M x 64
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
432-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,575

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