 | | MT53E512M64D4HJ-046 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 284 | |
 | | MT53E512M64D4HJ-046 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 905 | |
 | | MT53E512M64D4HJ-046 AUT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 363 | |
 | | MT53E512M64D4HJ-046 AUT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 1,440 | |
 | | MT53E512M64D4HJ-046 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | N/A | N/A | N/A | Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 43 | |
 | | MT53E512M64D4NK-046 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,076 | |
 | | MT53E512M64D4NK-046 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 393 | |
 | | MT53E512M64D4NK-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,534 | |
 | | MT53E512M64D4NK-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,400 | |
 | | MT53E512M64D4NW-046 IT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,523 | |
 | | MT53E512M64D4NW-046 IT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,377 | |
 | | MT53E512M64D4NW-046 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 479 | |
 | | MT53E512M64D4NW-046 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 288 | |
 | | MT53E512M64D4NW-053 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,735 | |
 | | MT53E512M64D4NW-053 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,575 | |