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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | MT46V32M16BN-6:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 573 | |
 | MT46V32M16BN-6:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 500 | ||
 | N/A | MT46V32M16BN-75 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 379 | |
 | N/A | MT46V32M16BN-75 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 768 | |
 | N/A | MT46V32M16BN-75 L:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 512 | |
 | N/A | MT46V32M16BN-75 L:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 260 | |
 | N/A | MT46V32M16BN-75:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 86 | |
 | N/A | MT46V32M16BN-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 750 ps Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,406 | |
 | N/A | MT46V32M16CV-5B IT:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,538 | |
 | MT46V32M16CV-5B IT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 879 | ||
 | MT46V32M16CV-5B:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 616 | ||
 | MT46V32M16CV-5B:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 738 | ||
 | MT46V32M16CY-5B AAT:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 933 | ||
 | MT46V32M16CY-5B AAT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,230 | ||
 | MT46V32M16CY-5B AIT:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 646 | ||
 | MT46V32M16CY-5B AIT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 857 | ||
 | MT46V32M16CY-5B L IT:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 594 | ||
| N/A | N/A | MT46V32M16CY-5B XIT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 344 | |
 | MT46V32M16CY-5B:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 704 | ||
 | MT46V32M16CY-5B:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,507 |
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