 | N/A | MT46V32M16FN-5B:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 262 | |
 | N/A | MT46V32M16FN-5B:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 199 | |
 | | MT46V32M16FN-5B:F | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,021 | |
 | | MT46V32M16FN-5B:F TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 764 | |
 | N/A | MT46V32M16FN-6 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 516 | |
 | N/A | MT46V32M16FN-6 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 746 | |
 | | MT46V32M16FN-6 IT:F | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,377 | |
 | | MT46V32M16FN-6 IT:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 940 | |
 | N/A | MT46V32M16FN-6:C | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 587 | |
 | N/A | MT46V32M16FN-6:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 96 | |
 | | MT46V32M16FN-6:F | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 654 | |
 | | MT46V32M16FN-6:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 135 | |
 | N/A | MT46V32M16FN-75 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 240 | |
 | N/A | MT46V32M16FN-75 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 752 | |
 | N/A | MT46V32M16FN-75 L:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 21 | |
 | N/A | MT46V32M16FN-75 L:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,497 | |
 | N/A | MT46V32M16FN-75:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,578 | |
 | N/A | MT46V32M16FN-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 591 | |
 | | MT46V32M16P-5B AIT:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,407 | |
 | | MT46V32M16P-5B AIT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,021 | |