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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | W9412G6IH-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 18 | ||
 | W9412G6JB-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 2.7V ~ 2.3V | 0°C ~ 70°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,955 | ||
 | W9412G6JB-5I TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 2.7V ~ 2.3V | -40°C ~ 85°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 475 | ||
 | W9412G6JH-4 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 48 ns Clock Frequency: 250 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 12 ns | 673 | ||
 | W9412G6JH-5I | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,958 | ||
 | W9412G6KH-4 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 48 ns Clock Frequency: 250 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 12 ns | 397 | ||
 | N/A | W9412G6KH-4 TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 48 ns Clock Frequency: 250 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 12 ns | 1,437 | |
 | W9412G6KH-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 928 | ||
 | W9412G6KH-5 TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,092 | ||
 | W9412G6KH-5I | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,093 | ||
 | W9412G6KH-5I TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 962 | ||
 | W9425G6EH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 55 ns Clock Frequency: 250 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 501 | ||
 | W9425G6JB-5 | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 55 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 616 | ||
 | W9425G6JB-5 TR | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 55 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 774 | ||
 | W9425G6JB-5I | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 55 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,200 | ||
 | W9425G6JB-5I TR | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 55 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 540 | ||
 | W9425G6KH-4 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 52 ns Clock Frequency: 250 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 154 | ||
 | W9425G6KH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 55 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 321 | ||
 | W9425G6KH-5 TR | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 55 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,594 | ||
 | W9425G6KH-5I | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 55 ns Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 692 |
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