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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M54D1G1664A | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 BGA | 705 | ||
| N/A | M54D1G1664A (2G) | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 BGA | 1,365 | ||
| N/A | M54D1G3232A | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 BGA | 1,462 | ||
| N/A | M54D1G3232A (2G) | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 BGA | 1,153 | ||
| N/A | M54D2G16128A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Memory Size: 2 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 128M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 Ball BGA | 219 | ||
| N/A | M54D2G3264A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Memory Size: 2 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 64M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 Ball BGA | 1,594 | ||
| N/A | N/A | M54D2G3264A (2C) | ESMT | 2Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Memory Size: 2 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 64M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 134 Ball BGA | 1,753 | |
| N/A | N/A | M54D4G32128ZA(2C) | ESMT | 4Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 134 Ball BGA | 1,213 | |
| N/A | M54D5121632A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 32M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 Ball BGA | 409 | ||
| N/A | M54D5123216A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 16M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 Ball BGA | 107 | ||
| N/A | M55D1G1664A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 361 | ||
| N/A | M55D1G1664A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 137 | ||
| N/A | M55D1G1664A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 1,016 | ||
| N/A | M55D1G1664A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 838 | ||
| N/A | M55D1G1664A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 19 | ||
| N/A | M55D1G1664A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 437 | ||
| N/A | M55D1G3232A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 1,732 | ||
| N/A | M55D1G3232A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 887 | ||
| N/A | M55D1G3232A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 1,813 | ||
| N/A | M55D1G3232A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 820 |
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