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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M55D1G3232A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 930 | ||
| N/A | M55D1G3232A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 694 | ||
| N/A | M55D4G16256A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 1,320 | ||
| N/A | M55D4G16256A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 468 | ||
| N/A | M55D4G16256A-GFBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 1,003 | ||
| N/A | M55D4G32128A (2R) | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178 Ball BGA | 1.8V / 1.2V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR3 Memory Organization: 128M x 32 Memory Interface: LPDDR3 Grade: Industrial Qualification: JEDEC Packaging: 178 Ball BGA | 101 | ||
| N/A | M55D4G32128A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 795 | ||
| N/A | M55D4G32128A-CDBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 18 | ||
| N/A | M55D4G32128A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 881 | ||
| N/A | M55D4G32128A-EEBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 262 | ||
| N/A | M55D4G32128A-GFBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 475 | ||
| N/A | M55D4G32128A-GFBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 302 | ||
| N/A | M56Z4G16256A (2H) | ESMT | 4Gb LPDDR4x SDRAM Ind. | DRAM Memory | 200 Ball BGA | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 16 Memory Interface: LPDDR4X Grade: Industrial Qualification: JEDEC Packaging: 200 Ball BGA | 157 | ||
| N/A | M56Z4G16256A2H | ESMT | 4Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 16 Memory Interface: LPDDR4X Grade: Commercial Qualification: JEDEC Packaging: 200 Ball BGA | 563 | ||
| N/A | N/A | M56Z8G16512A (2H) | ESMT | 8Gb LPDDR4x SDRAM Ind. | DRAM Memory | 200 Ball BGA | 2.5V | -40°C – 85°C | Memory Size: 8 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR4x SDRAM Memory Organization: 512M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 200 Ball BGA | 1,500 | |
| N/A | M56Z8G32256A | ESMT | 8Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 8 Gbit Clock Frequency: 1.866 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 32 Memory Interface: LPDDR4X Grade: Commercial Qualification: JEDEC Packaging: 200 Ball BGA | 1,441 | ||
| N/A | M56Z8G32256A (2H) | ESMT | 8Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 8 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 32 Memory Interface: LPDDR4X Grade: Commercial Qualification: JEDEC Packaging: 200 Ball BGA | 1,980 |
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