| N/A | | M12L5121632A-7BG2T | ESMT | 512Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,277 | |
| N/A | | M12L5121632A-7T(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 933 | |
| N/A | | M12L5121632A-7TG2T | ESMT | 512Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 343 | |
| N/A | | M12L64164A-5B(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 1,432 | |
| N/A | | M12L64164A-5BG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-VBGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 567 | |
| N/A | | M12L64164A-5T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 1,704 | |
| N/A | | M12L64164A-5TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 395 | |
| N/A | | M12L64164A-7B(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 607 | |
| N/A | | M12L64164A-7BG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-VBGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 220 | |
| N/A | | M12L64164A-7T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 620 | |
| N/A | | M12L64164A-7TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 205 | |
| N/A | | M12L64322A (2S) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 86 TSOPII/ 90 BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 32 Memory Interface: Parallel Packaging: 86 TSOPII/ 90 BGA | 964 | |
| N/A | | M12L64322A-5BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 561 | |
| N/A | | M12L64322A-5TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 17 | |
| N/A | | M12L64322A-6BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,095 | |
| N/A | | M12L64322A-6TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,586 | |
| N/A | | M12L64322A-7BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,644 | |
| N/A | | M12L64322A-7TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 63 | |
| N/A | | M13D64322A-4.5BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 702 | |
| N/A | | M13D64322A-4BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 1,490 | |