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Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 317
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/A
M13D64322A-5BG2SESMT64Mb LPDDR SDRAMDRAM Memory144-FBGA (12x12)1.7V ~ 1.95V0°C – 70°C
Memory Size:
64 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
512K x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
144-UFBGA, FCBGA
1,632
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QUOTE
N/A
M13S128168A-4.5BG2SESMT128Mb DDR SDRAMDRAM Memory60-BGA2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
225 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
12.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
60-BGA
21
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QUOTE
N/A
M13S128168A-4.5TG2SESMT128Mb DDR SDRAMDRAM Memory66-TSOPII2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
225 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
12.5 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
66-TSOPII
1,783
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QUOTE
N/A
M13S128168A-4BG2SESMT128Mb DDR SDRAMDRAM Memory60-BGA2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
250 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
60-BGA
749
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N/A
M13S128168A-4TG2SESMT128Mb DDR SDRAMDRAM Memory66-TSOPII2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
250 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
66-TSOPII
1,491
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QUOTE
N/A
M13S128168A-5BG2SESMT128Mb DDR SDRAMDRAM Memory60-BGA2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
60-BGA
60
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QUOTE
N/A
M13S128168A-5TG2SESMT128Mb DDR SDRAMDRAM Memory66-TSOPII2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
66-TSOPII
131
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QUOTE
N/A
M13S128168A-6BG2SESMT128Mb DDR SDRAMDRAM Memory60-BGA2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
60-BGA
1,544
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QUOTE
N/A
M13S128168A-6TG2SESMT128Mb DDR SDRAMDRAM Memory66-TSOPII2.3V ~ 2.7V0°C – 70°C
Memory Size:
128 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
2M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
66-TSOPII
1,166
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QUOTE
N/A
M13S128324A-3.6BIG2MESMT128Mb DDR SDRAM Ind.DRAM Memory144-FBGA2.5V ~ 2.7V-40°C – 85°C
Memory Size:
128 Mbit
Clock Frequency:
275 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
1M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
144-FBGA
366
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QUOTE
N/A
M13S128324A-4BIG2MESMT128Mb DDR SDRAM Ind.DRAM Memory144-FBGA2.375V ~ 2.625V-40°C – 85°C
Memory Size:
128 Mbit
Clock Frequency:
250 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
1M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
144-FBGA
445
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QUOTE
N/A
M13S128324A-5BIG2MESMT128Mb DDR SDRAM Ind.DRAM Memory144-FBGA2.375V ~ 2.625V-40°C – 85°C
Memory Size:
128 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
1M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
144-FBGA
932
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QUOTE
N/A
M13S128324A-6BIG2MESMT128Mb DDR SDRAM Ind.DRAM Memory144-FBGA2.375V ~ 2.625V-40°C – 85°C
Memory Size:
128 Mbit
Clock Frequency:
166 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
1M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
144-FBGA
506
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QUOTE
N/A
M13S2561616A-4BG2TESMT256Mb DDR SDRAMDRAM Memory60-BGA2.3V ~ 2.7V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
250 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
60-BGA
467
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QUOTE
N/A
M13S2561616A-4BIG2TESMT256Mb DDR SDRAM Ind.DRAM Memory60-BGA2.3V ~ 2.7V-40°C – 85°C
Memory Size:
256 Mbit
Clock Frequency:
250 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
60-BGA
745
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QUOTE
N/A
M13S2561616A-4TG2TESMT256Mb DDR SDRAMDRAM Memory66-TSOPII2.3V ~ 2.7V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
250 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
66-TSOPII
1,651
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QUOTE
N/A
M13S2561616A-4TIG2TESMT256Mb DDR SDRAM Ind.DRAM Memory66-TSOPII2.3V ~ 2.7V-40°C – 85°C
Memory Size:
256 Mbit
Clock Frequency:
250 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
10 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
66-TSOPII
1,110
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QUOTE
N/A
M13S2561616A-5BG2TESMT256Mb DDR SDRAMDRAM Memory60-BGA2.3V ~ 2.7V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
60-BGA
894
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QUOTE
N/A
M13S2561616A-5BIG2TESMT256Mb DDR SDRAM Ind.DRAM Memory60-BGA2.3V ~ 2.7V-40°C – 85°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
60-BGA
1,210
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QUOTE
N/A
M13S2561616A-5TG2TESMT256Mb DDR SDRAMDRAM Memory66-TSOPII2.3V ~ 2.7V0°C – 70°C
Memory Size:
256 Mbit
Clock Frequency:
200 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
15 ns
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
DRAM
Memory Organization:
4M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
JEDEC
Packaging:
66-TSOPII
15
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