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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT48LC16M16A2TG-7E L:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 889 | ||
 | MT48LC16M16A2TG-7E:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 265 | ||
| N/A | N/A | MT48LC16M16A2Y66AWC1 | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 133MHZ | DRAM Memory | Die | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: Die Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 688 | |
 | MT48LC16M4A2P-75:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 4 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 526 | ||
 | MT48LC16M4A2P-7E:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 4 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,015 | ||
| N/A | MT48LC16M8A2BB-6A AAT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 601 | ||
| N/A | MT48LC16M8A2BB-6A AAT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,323 | ||
| N/A | MT48LC16M8A2BB-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 139 | ||
| N/A | MT48LC16M8A2BB-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 920 | ||
| N/A | MT48LC16M8A2BB-6A:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 879 | ||
| N/A | MT48LC16M8A2BB-6A:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 939 | ||
 | MT48LC16M8A2BB-75 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 512 | ||
 | MT48LC16M8A2BB-75:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 1,626 | ||
 | MT48LC16M8A2BB-7E:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 976 | ||
 | MT48LC16M8A2FB-75 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 1,203 | ||
 | MT48LC16M8A2P-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 819 | ||
 | MT48LC16M8A2P-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,541 | ||
 | MT48LC16M8A2P-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 202 | ||
 | MT48LC16M8A2P-6A IT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 854 | ||
 | MT48LC16M8A2P-6A:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 626 |
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