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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT48LC32M16A2TG-75 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 443 | ||
 | MT48LC32M16A2TG-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 688 | ||
 | MT48LC32M8A2BB-6A:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 79 | ||
 | MT48LC32M8A2BB-6A:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,816 | ||
 | MT48LC32M8A2BB-75:D | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 347 | ||
 | MT48LC32M8A2BB-7E:G | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 51 | ||
 | MT48LC32M8A2BB-7E:G TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 304 | ||
 | MT48LC32M8A2FB-75 L:D TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 1,287 | ||
 | MT48LC32M8A2FB-75:D TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 308 | ||
 | MT48LC32M8A2FB-7E:D TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 60-FBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,150 | ||
 | MT48LC32M8A2P-6A IT:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 395 | ||
 | MT48LC32M8A2P-6A IT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 234 | ||
 | MT48LC32M8A2P-6A:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 445 | ||
 | MT48LC32M8A2P-6A:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 62 | ||
 | MT48LC32M8A2P-6A:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 136 | ||
 | MT48LC32M8A2P-6A:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 207 | ||
 | MT48LC32M8A2P-75 IT:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 306 | ||
 | MT48LC32M8A2P-75 IT:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 627 | ||
 | MT48LC32M8A2P-75 L:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 217 | ||
 | MT48LC32M8A2P-75 L:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 886 |
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