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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT48LC4M32B2B5-6A:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 23 | ||
 | MT48LC4M32B2B5-7 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 781 | ||
 | MT48LC4M32B2B5-7 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,912 | ||
 | MT48LC4M32B2B5-7:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,297 | ||
 | MT48LC4M32B2B5-7:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 916 | ||
 | MT48LC4M32B2F5-6:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 69 | ||
 | MT48LC4M32B2F5-6:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 463 | ||
 | MT48LC4M32B2F5-7 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,822 | ||
 | MT48LC4M32B2F5-7:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,386 | ||
 | MT48LC4M32B2P-6 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 175 | ||
 | MT48LC4M32B2P-6:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 231 | ||
 | MT48LC4M32B2P-6:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 167 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 241 | ||
 | MT48LC4M32B2P-6A AAT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 152 | ||
 | MT48LC4M32B2P-6A AAT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 706 | ||
 | MT48LC4M32B2P-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 152 | ||
 | MT48LC4M32B2P-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 147 | ||
 | MT48LC4M32B2P-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 609 | ||
 | MT48LC4M32B2P-6A IT:L TR | Micron Technology Inc. | SDRAM 128Mb (4Mx32) 166Mhz 6ns C | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,486 | ||
 | MT48LC4M32B2P-6A XIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 51 | ||
 | MT48LC4M32B2P-6A XIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 167 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 548 |
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