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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT53E1G32D2FW-046 AAT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 701 | ||
 | MT53E1G32D2FW-046 AAT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 142 | ||
 | N/A | MT53E1G32D2FW-046 AAT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 822 | |
 | N/A | MT53E1G32D2FW-046 AAT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,819 | |
 | MT53E1G32D2FW-046 AIT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 736 | ||
 | MT53E1G32D2FW-046 AIT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 17 | ||
 | MT53E1G32D2FW-046 AIT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 559 | ||
 | MT53E1G32D2FW-046 AIT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,535 | ||
 | N/A | MT53E1G32D2FW-046 AIT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 842 | |
 | N/A | MT53E1G32D2FW-046 AIT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 297 | |
 | MT53E1G32D2FW-046 AUT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 330 | ||
 | MT53E1G32D2FW-046 AUT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 537 | ||
 | MT53E1G32D2FW-046 AUT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,136 | ||
 | MT53E1G32D2FW-046 AUT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 717 | ||
 | N/A | MT53E1G32D2FW-046 AUT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,409 | |
 | N/A | MT53E1G32D2FW-046 AUT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 263 | |
 | N/A | MT53E1G32D2FW-046 IT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 60 | |
 | N/A | MT53E1G32D2FW-046 IT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 687 | |
 | N/A | MT53E1G32D2FW-046 IT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 742 | |
 | MT53E1G32D2FW-046 IT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 173 |
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