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Electronic Parts Search

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Total Products: 3,054
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
MT53E1G32D4NQ-046 WT:FN/AMT53E1G32D4NQ-046 WT:FMicron Technology Inc.IC DRAM 32GBIT 200VFBGADRAM Memory200-VFBGA (10x14.5)1.06V ~ 1.17V-30°C ~ 85°C
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Commercial (Extended)
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
950
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QUOTE
MT53E1G32D4NQ-046 WT:F TRN/AMT53E1G32D4NQ-046 WT:F TRMicron Technology Inc.IC DRAM 32GBIT 200VFBGADRAM Memory200-VFBGA (10x14.5)1.06V ~ 1.17V-30°C ~ 85°C
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Commercial (Extended)
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-VFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,322
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QUOTE
N/AN/AMT53E1G32D4NQ-053 RS WT:JMicron Technology Inc.IC DRAM 32GBIT FBGADRAM MemoryN/AN/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
N/A
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
296
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QUOTE
N/AN/AMT53E1G32D4NQ-053 RS WT:J TRMicron Technology Inc.IC DRAM 32GBIT FBGADRAM MemoryN/AN/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
N/A
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
77
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QUOTE
MT53E1G32D4NQ-053 WT:EN/AMT53E1G32D4NQ-053 WT:EMicron Technology Inc.IC DRAM 32GBIT 1.866GHZ FBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
1.866 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
1,117
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QUOTE
MT53E1G32D4NQ-053 WT:E TRN/AMT53E1G32D4NQ-053 WT:E TRMicron Technology Inc.IC DRAM 32GBIT 1.866GHZ FBGADRAM MemoryN/A1.1V-30°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
1.866 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
N/A
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4
Write Cycle Time Word Page:
N/A
535
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QUOTE
N/AN/AMT53E1G64D4HJ-046 AAT:AMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)N/AN/A
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
294
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QUOTE
N/AN/AMT53E1G64D4HJ-046 AAT:A TRMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)N/AN/A
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
659
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QUOTE
MT53E1G64D4HJ-046 AAT:CN/AMT53E1G64D4HJ-046 AAT:CMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
961
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QUOTE
MT53E1G64D4HJ-046 AAT:C TRN/AMT53E1G64D4HJ-046 AAT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
306
GET A
QUOTE
N/AN/AMT53E1G64D4HJ-046 AIT:AMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)N/AN/A
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
1,018
GET A
QUOTE
N/AN/AMT53E1G64D4HJ-046 AIT:A TRMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)N/AN/A
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
1,575
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QUOTE
MT53E1G64D4HJ-046 AIT:CN/AMT53E1G64D4HJ-046 AIT:CMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
970
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QUOTE
MT53E1G64D4HJ-046 AIT:C TRN/AMT53E1G64D4HJ-046 AIT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
916
GET A
QUOTE
MT53E1G64D4HJ-046 AUT:CN/AMT53E1G64D4HJ-046 AUT:CMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
985
GET A
QUOTE
MT53E1G64D4HJ-046 AUT:C TRN/AMT53E1G64D4HJ-046 AUT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
264
GET A
QUOTE
N/AN/AMT53E1G64D4HJ-046 WT:AMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)N/AN/A
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
765
GET A
QUOTE
N/AN/AMT53E1G64D4HJ-046 WT:A TRMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)N/AN/A
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
N/A
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
N/A
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
N/A
1,598
GET A
QUOTE
MT53E1G64D4HJ-046 WT:C
MT53E1G64D4HJ-046 WT:CMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-30°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
686
GET A
QUOTE
MT53E1G64D4HJ-046 WT:C TRN/AMT53E1G64D4HJ-046 WT:C TRMicron Technology Inc.IC DRAM 64GBIT PAR 556WFBGADRAM Memory556-WFBGA (12.4x12.4)1.06V ~ 1.17V-30°C ~ 85°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 64
Memory Size:
64 Gbit
Memory Type:
Volatile
Packaging:
556-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
968
GET A
QUOTE

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