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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT53E512M64D4HJ-046 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Access Time: N/A Clock Frequency: N/A Grade: N/A Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: N/A Packaging: 556-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 380 | ||
 | MT53E512M64D4HJ-046 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 284 | ||
 | MT53E512M64D4HJ-046 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 905 | ||
 | MT53E512M64D4HJ-046 AUT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 363 | ||
 | MT53E512M64D4HJ-046 AUT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 556-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 1,440 | ||
 | MT53E512M64D4HJ-046 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | N/A | N/A | N/A | Access Time: N/A Clock Frequency: N/A Grade: N/A Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: N/A Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 43 | ||
 | MT53E512M64D4NK-046 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 366-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,076 | ||
 | MT53E512M64D4NK-046 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 366-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 393 | ||
 | MT53E512M64D4NK-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 1.866 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 366-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,534 | ||
 | MT53E512M64D4NK-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 1.866 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 366-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,400 | ||
 | MT53E512M64D4NW-046 IT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,523 | ||
 | MT53E512M64D4NW-046 IT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,377 | ||
 | MT53E512M64D4NW-046 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 479 | ||
 | MT53E512M64D4NW-046 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 288 | ||
 | MT53E512M64D4NW-053 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 1.866 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,735 | ||
 | MT53E512M64D4NW-053 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 1.866 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 432-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,575 | ||
 | Q6422PM3BDGVK-U | Kingston Technology | 64GB 200 BALL FBGA LPDDR4 4266MH | DRAM Memory | 200-FBGA (10x14.5) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -25°C ~ 85°C | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: N/A Memory Organization: 2G x 16 Memory Size: 64 Gbit Memory Type: N/A Packaging: 200-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 874 | ||
 | Q6422XM3BDGVK-U | Kingston Technology | IC DRAM 64GBIT PAR 200FBGA | DRAM Memory | 200-FBGA (10x14.5) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4G x 16 Memory Size: 64 Gbit Memory Type: Volatile Packaging: 200-VFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 298 | ||
 | W9412G6IH-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 18 | ||
 | W9412G6JB-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 2.7V ~ 2.3V | 0°C ~ 70°C (TA) | Access Time: 50 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,955 |
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