 | | W9464G6JH-5 | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,365 | |
 | | W9464G6JH-5I | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 928 | |
 | | W9464G6KH-4 | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,440 | |
 | N/A | W9464G6KH-4 TR | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,289 | |
 | | W9464G6KH-5 | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,033 | |
 | | W9464G6KH-5 TR | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 18 | |
 | | W9464G6KH-5I | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,748 | |
 | | W9464G6KH-5I TR | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,221 | |
 | | W9725G6IB-25 | Winbond Electronics | IC DRAM 256MBIT PAR 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 291 | |
 | | W9725G6JB25I | Winbond Electronics | IC DRAM 256MBIT PAR 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 891 | |
 | | W9751G6IB-25 | Winbond Electronics | IC DRAM 512MBIT PARALLEL 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 266 | |
 | | W9751G6KB-18 | Winbond Electronics | IC DRAM 512MBIT PAR 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 739 | |
 | | W9751G6KB-18 TR | Winbond Electronics | IC DRAM 512MBIT PAR 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,143 | |
 | | W9751G6KB-25 | Winbond Electronics | IC DRAM 512MBIT PARALLEL 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,429 | |
 | | W9751G6KB-25 TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,488 | |
 | | W9751G6KB25I | Winbond Electronics | IC DRAM 512MBIT PARALLEL 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 800 | |
 | | W9751G6KB25I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,550 | |
 | | W9751G6NB-18 | Winbond Electronics | IC DRAM 512MBIT PAR 84VFBGA | DRAM Memory | 84-VFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 128 | |
 | | W9751G6NB-18 TR | Winbond Electronics | IC DRAM 512MBIT PAR 84VFBGA | DRAM Memory | 84-VFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 77 | |
 | | W9751G6NB-25 | Winbond Electronics | IC DRAM 512MBIT PAR 84VFBGA | DRAM Memory | 84-VFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 317 | |