 | | W9751G6NB-25 TR | Winbond Electronics | IC DRAM 512MBIT PAR 84VFBGA | DRAM Memory | 84-VFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 726 | |
 | | W9751G6NB25I | Winbond Electronics | IC DRAM 512MBIT PAR 84VFBGA | DRAM Memory | 84-VFBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,135 | |
 | | W9751G6NB25I TR | Winbond Electronics | IC DRAM 512MBIT PAR 84VFBGA | DRAM Memory | 84-VFBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,389 | |
 | | W9751G8KB-25 | Winbond Electronics | IC DRAM 512MBIT PARALLEL 60WBGA | DRAM Memory | 60-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,152 | |
 | | W9751G8KB-25 TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 60WBGA | DRAM Memory | 60-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,446 | |
 | | W9751G8KB25I | Winbond Electronics | IC DRAM 512MBIT PARALLEL 60WBGA | DRAM Memory | 60-WBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 232 | |
 | | W9751G8KB25I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 60WBGA | DRAM Memory | 60-WBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 982 | |
 | | W9751G8NB-25 | Winbond Electronics | IC DRAM 512MBIT PAR 60VFBGA | DRAM Memory | 60-VFBGA (8x9.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 304 | |
 | | W9751G8NB-25 TR | Winbond Electronics | IC DRAM 512MBIT PAR 60VFBGA | DRAM Memory | 60-VFBGA (8x9.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,290 | |
 | | W9751G8NB25I | Winbond Electronics | IC DRAM 512MBIT PAR 60VFBGA | DRAM Memory | 60-VFBGA (8x9.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,618 | |
 | | W9751G8NB25I TR | Winbond Electronics | IC DRAM 512MBIT PAR 60VFBGA | DRAM Memory | 60-VFBGA (8x9.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 776 | |
 | | W9812G2KB-6 | Winbond Electronics | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 494 | |
 | | W9812G2KB-6 TR | Winbond Electronics | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 845 | |
 | | W9812G2KB-6I | Winbond Electronics | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,266 | |
 | | W9812G2KB-6I TR | Winbond Electronics | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,700 | |
 | | W9812G6IH-6 | Winbond Electronics | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 636 | |
 | | W9812G6JB-6 | Winbond Electronics | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 652 | |
 | | W9812G6JB-6 TR | Winbond Electronics | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 15 | |
 | | W9812G6JB-6I | Winbond Electronics | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 520 | |
 | | W9812G6JB-6I TR | Winbond Electronics | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 19 | |