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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | W9825G2JB75I | Winbond Electronics | IC DRAM 256MBIT LVTTL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,057 | ||
 | W9825G6EH-6 | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,490 | ||
 | W9825G6JB-6 | Winbond Electronics | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 797 | ||
 | W9825G6JB-6 TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 790 | ||
 | W9825G6JB-6I | Winbond Electronics | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,008 | ||
 | W9825G6JB-6I TR | Winbond Electronics | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 845 | ||
 | W9825G6JH-6 TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 835 | ||
 | W9825G6JH-6I | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 931 | ||
 | W9825G6JH-6I TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 45 | ||
 | W9825G6KB-6 | Winbond Electronics | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TC) | Access Time: 5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,001 | ||
 | W9825G6KB-6 TR | Winbond Electronics | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TC) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 837 | ||
 | W9825G6KB-6I | Winbond Electronics | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TC) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 445 | ||
 | W9825G6KB-6I TR | Winbond Electronics | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TC) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,036 | ||
 | W9825G6KH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 31 | ||
 | W9825G6KH-5 TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 18 | ||
 | W9825G6KH-6 | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 788 | ||
 | W9825G6KH-6 TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 357 | ||
 | W9825G6KH-6I | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 552 | ||
 | W9825G6KH-6I TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 430 | ||
 | W9864G6IH-6 | Winbond Electronics | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 77 |
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