 | | IS42S16320F-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 837 | |
 | | IS42S16320F-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,619 | |
 | | IS42S16320F-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,624 | |
 | | IS42S16320F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 771 | |
 | | IS42S16320F-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,926 | |
 | | IS42S16320F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 944 | |
 | | IS42S16320F-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,371 | |
 | | IS42S16320F-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 427 | |
 | | IS42S16320F-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 157 | |
 | | IS42S16320F-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 36 | |
 | | IS42S16320F-7TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,214 | |
 | | IS42S16320F-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 659 | |
 | | IS42S16320F-7TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 115 | |
 | | IS42S16320F-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 845 | |
 | | IS42S16400D-6BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 250 | |
 | | IS42S16400D-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,103 | |
 | | IS42S16400D-6BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 736 | |
 | | IS42S16400D-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | DRAM Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,697 | |
 | | IS42S16400D-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,011 | |
 | | IS42S16400D-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 77 | |