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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | IS42S16800J-7TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 132 | |
 | N/A | IS42S16800J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 458 | |
 | IS42S32160A-75B | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 15 | ||
 | IS42S32160A-75B-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 393 | ||
 | IS42S32160A-75BI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,361 | ||
 | IS42S32160A-75BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 230 | ||
 | IS42S32160A-75BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,002 | ||
 | IS42S32160A-75BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 6 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 789 | ||
 | IS42S32160B-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 524 | ||
 | IS42S32160B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 523 | ||
 | IS42S32160B-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,424 | ||
 | IS42S32160B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 592 | ||
 | IS42S32160B-75BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 540 | ||
 | IS42S32160B-75EBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 299 | ||
 | IS42S32160B-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 37 | ||
 | IS42S32160B-75ETLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 199 | ||
 | IS42S32160B-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,850 | ||
 | IS42S32160B-75TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 308 | ||
 | IS42S32160B-75TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 598 | ||
 | IS42S32160B-75TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 32 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,196 |
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