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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS42S32200C1-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 65 | ||
 | IS42S32200C1-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,391 | ||
 | IS42S32200C1-7B | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,183 | ||
 | IS42S32200C1-7BI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 790 | ||
 | IS42S32200C1-7BI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 897 | ||
 | IS42S32200C1-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,142 | ||
 | IS42S32200C1-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 174 | ||
 | IS42S32200C1-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,541 | ||
 | IS42S32200C1-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-LFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 339 | ||
 | IS42S32200C1-7T | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 190 | ||
 | IS42S32200C1-7T-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,395 | ||
 | IS42S32200C1-7TI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,179 | ||
 | IS42S32200C1-7TI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,162 | ||
 | IS42S32200C1-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 155 | ||
 | IS42S32200C1-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 698 | ||
 | IS42S32200C1-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,141 | ||
 | IS42S32200C1-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,003 | ||
 | IS42S32200E-5TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 526 | ||
 | IS42S32200E-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 103 | ||
 | IS42S32200E-6B | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 904 |
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