 | N/A | IS42S32200N-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 75 | |
 | N/A | IS42S32200N-6BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 997 | |
 | N/A | IS42S32200N-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 372 | |
 | N/A | IS42S32200N-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,922 | |
 | N/A | IS42S32200N-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 148 | |
 | N/A | IS42S32200N-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,089 | |
 | N/A | IS42S32200N-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,278 | |
 | N/A | IS42S32200N-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 423 | |
 | N/A | IS42S32200N-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,104 | |
 | N/A | IS42S32200N-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 48 | |
 | N/A | IS42S32200N-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 964 | |
 | N/A | IS42S32200N-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 20 | |
 | N/A | IS42S32200N-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 140 | |
 | N/A | IS42S32200N-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 312 | |
 | N/A | IS42S32200N-7TLI-TR | Integrated Silicon Solution Inc | 64M, 3.3V, SDRAM, 2MX32, 143MHZ, | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,303 | |
 | | IS42S32400B-6B | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 371 | |
 | | IS42S32400B-6BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 661 | |
 | | IS42S32400B-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,635 | |
 | | IS42S32400B-6TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 218 | |
 | | IS42S32400B-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,344 | |