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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS45S32200L-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 10 | ||
 | IS45S32200L-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 51 | ||
 | IS45S32200L-7BLA1 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,080 | ||
 | IS45S32200L-7BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 100 | ||
 | IS45S32200L-7BLA2 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 822 | ||
 | IS45S32200L-7BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 382 | ||
 | IS45S32200L-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 39 | ||
 | IS45S32200L-7TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 816 | ||
 | IS45S32200L-7TLA2 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 692 | ||
 | IS45S32200L-7TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,735 | ||
 | N/A | IS45S32200N-6BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 1,731 | |
 | N/A | IS45S32200N-6BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 979 | |
 | N/A | IS45S32200N-7BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 850 | |
 | N/A | IS45S32200N-7BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 688 | |
 | N/A | IS45S32200N-7BLA2 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,434 | |
 | N/A | IS45S32200N-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 759 | |
 | IS45S32400B-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 430 | ||
 | IS45S32400B-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 25 | ||
 | IS45S32400B-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 349 | ||
 | IS45S32400B-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 735 |
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