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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | IS45S32800J-7TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,069 | ||
 | IS45S32800L-6BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 1,245 | ||
 | IS45S32800L-6BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 417 | ||
 | IS45S32800L-6TLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 1,376 | ||
 | IS45S32800L-6TLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 422 | ||
 | IS45S32800L-7BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 1,656 | ||
 | IS45S32800L-7BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 232 | ||
 | IS45S32800L-7TLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 1,051 | ||
 | IS45S32800L-7TLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Automotive Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: N/A | 361 | ||
 | N/A | IS46DR16160B-25DBLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 553 | |
 | N/A | IS46DR16160B-25DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 231 | |
 | N/A | IS46DR16160B-25DBLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,100 | |
 | N/A | IS46DR16160B-25DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 234 | |
 | N/A | IS46DR16160B-3DBLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 967 | |
 | N/A | IS46DR16160B-3DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 699 | |
 | N/A | IS46DR16160B-3DBLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 710 | |
 | N/A | IS46DR16160B-3DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 850 | |
 | IS46DR16320C-3DBA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Access Time: 450 ps Clock Frequency: 333 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 653 | ||
 | IS46DR16320D-25DBA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 518 | ||
 | IS46DR16320E-25DBLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 966 |
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